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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA748 DESCRIPTION *With TO-220 package *Complement to type 2SC1398 *Large collector power dissipation APPLICATIONS *For medium power amplifier applicattions PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -70 -50 -5 -2 -3 15 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-1mA ,IE=0 IC=-1A; IB=-0.1A IC=-2A; IB=-0.2A VCB=-40V; IE=0 VCE=-20V; IB=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-5V IC=-1A ; VCE=-5V IC=0.5A ; VCE=-5V 30 50 120 MIN -50 -70 -0.6 -1.0 TYP. 2SA748 MAX UNIT V V -1.0 -1.5 -1 -100 -100 V V A A A 220 MHz hFE-2 Classifications P 50-100 Q 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA748 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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